Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing
نویسندگان
چکیده
In this work, we fabricated the antireflection microstructures (ARMs) on ZnSe surfaces using a femtosecond Bessel direct laser writing in burst mode. The morphology and transmittance performance of ARMs with different single-pulse energies (from 200 nJ to 500 nJ), modes (burst 1, 3, 5 modes), periods 3 μm 6 μm), arrangements were investigated. results revealed that tetragonally arranged by energy, mode, period show best performance. average was about 17.13% higher than bulk range 8–12 μm, highest 81.75% (an improvement 18.63% one side ZnSe) achieved at 12.36 μm. This process makes it possible enhance ARMs’ infrared wavelength
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ژورنال
عنوان ژورنال: Photonics
سال: 2023
ISSN: ['2304-6732']
DOI: https://doi.org/10.3390/photonics10040479